Trapping/detrapping induced negative differential resistance in Cu/Ni:ZnO/InGa Schottky diode

Nejeh Hamdaoui, Fatma Ben Amor, Amine Rasheed Mezni, Ridha Ajjel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Schottky diode based Cu/Ni:ZnO/InGa structure has been fabricated. The electrical characterization have highlighted the presence of negative differential resistance (NDR) effect and negative photoconductivity (NPC) in one device and at room temperature. The NDR effect can be explained in terms of trappings and detrapping of the mobile charges at the interface Cu/ Ni:ZnO. The main cause of the NPC effect is a combination between carriers injection by the external field and photocarriers due to UV illumination. As a result, these two features (NDR and NPC) lead to the optical switching effect in our device.

Original languageEnglish
Title of host publication18th IEEE International Multi-Conference on Systems, Signals and Devices, SSD 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1339-1344
Number of pages6
ISBN (Electronic)9781665414937
DOIs
StatePublished - 22 Mar 2021
Externally publishedYes
Event18th IEEE International Multi-Conference on Systems, Signals and Devices, SSD 2021 - Monastir, Tunisia
Duration: 22 Mar 202125 Mar 2021

Publication series

Name18th IEEE International Multi-Conference on Systems, Signals and Devices, SSD 2021

Conference

Conference18th IEEE International Multi-Conference on Systems, Signals and Devices, SSD 2021
Country/TerritoryTunisia
CityMonastir
Period22/03/2125/03/21

Keywords

  • negative differential resistance
  • negative photoconductivity
  • optical switching
  • Polyol method

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