Transmission of reactive pulsed laser deposited VO 2 films in the THz domain

Nicolas Émond, Ali Hendaoui, Akram Ibrahim, Ibraheem Al-Naib, Tsuneyuki Ozaki, Mohamed Chaker

Research output: Contribution to journalJournal articlepeer-review

17 Scopus citations


This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO 2 ) films in the terahertz (THz) frequency range, namely the transition temperature T IMT , the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO 2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O 2 pressure (P O2 ) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO 2 films obtained at low P O2 exhibit low T IMT , large ΔA, and narrow ΔH. Increasing P O2 results in VO 2 films with higher T IMT , smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO 2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

Original languageEnglish
Pages (from-to)377-383
Number of pages7
JournalApplied Surface Science
StatePublished - 30 Aug 2016


  • Grain growth
  • Metal-to-insulator transition
  • Reactive pulsed lased deposition
  • Terahertz technology
  • Thermochromic VO


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