Low temperature growth of boron nitride nanotubes on substrates

Jiesheng Wang, Vijaya K. Kayastha, Yoke Khin Yap, Zhiyong Fan, Jia G. Lu, Zhengwei Pan, Ilia N. Ivanov, Alex A. Puretzky, David B. Geohegan

Research output: Contribution to journalJournal articlepeer-review

157 Scopus citations


High growth temperatures (>1100°C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600°C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

Original languageEnglish
Pages (from-to)2528-2532
Number of pages5
JournalNano Letters
Issue number12
StatePublished - Dec 2005
Externally publishedYes


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